Palmstrøm Group 2019
Palmstrøm Group 2019

Lab Members

Principal Investigator

Photo

Epitaxy of dissimilar materials.

Postdoctoral Researchers

- Molecular beam epitaxy of Heuslers

- Rare-earth monopnictides and III-V semiconductors

- Angle-resolved photoemission spectroscopy (ARPES)

- Low-temperature transport

- Spintronics

- Growth and characterization of Heusler compounds

- III-V heterostructures

- Molecular beam epitaxy of semiconductor/superconductor heterostructures

- Quantum transport in nanostructures of the hybrid systems

- Low dimensional nanowire growth

III-As,Sb IR lasers, Heuslers compounds, spintronics, quantum computing

Graduate Students

III-V high-mobility growth and devices, spintronics, heterostructures for topological quantum computing

Molecular beam epitaxial growth, transport, and spectroscopy studies of Co-based Weyl Semimetal Heusler alloys and Li-based half Heusler alloys.

MBE Growth of III-V materials, deposition of superconductors onto semiconductors, material systems for topological quantum computing

Confined Epitaxial Lateral Over growth, Selective Area Growth, Chemical Beam Epitaxy, Focussed Ion Beam, Transmission Electron Microscopy, Low temperature transport, Microfabrication, III-V growth, Dilution Refrigerator

Molecular beam epitaxy (MBE) growth, angle-resolved photoemission spectroscopy, and electronic characterization of topologically non-trivial Heusler compounds and rare-earth monopnictides.

Molecular Beam Epitaxy (MBE) growth of III-V semiconductor-superconductor heterostructures, low temperature optical spectroscopy, Scanning Tunneling Microscopy, topological quantum computing

MBE growth and characterization of 2D electronic materials for advanced devices, such as hexagonal boron nitride (hBN)

- Selective area growth (SAG) of low dimensional nanowire arrays

- Chemical beam epitaxy (CBE) 

- Superconductor/semiconductor hybrid systems

- Materials and devices for topological quantum computing

 

MBE growth of III-V materials, scanning tunneling microscopy and spectroscopy, ARPES

Visiting Researchers

Visiting scientist from NRL. Research on surface science studies during plasma-assisted atomic layer epitaxial growth of InN on GaN substrates.

Heuslers and magnetic materials. On sabbatic from Cardiff University.

Visiting postdoc from NRL. Research on surface science studies during plasma-assisted atomic layer epitaxial growth of InN on GaN substrates.

MBE growth of Heuslers on II-VI materials. Visiting from the Army Research Lab (ARL).