2016 Palmstrøm Research Group
2016 Palmstrøm Research Group

Lab Members

Principal Investigator


Epitaxy of dissimilar materials.

Technical Staff

· Chemical beam epitaxial growth of III-V semiconductor heterostructures and multifunctional Heusler compounds

· Spectroscopic ellipsometric studies of the optical properties of solid-state materials

· In-situ optical and electrical characterization of the degradation mechanisms for the physical properties and device performance

Postdoctoral Researchers

His research is on molecular beam epitaxial growth, transport, and spectroscopy studies of topologically non-trivial Heusler alloys and designer Heusler heterostructures. His research projects include molecular beam epitaxial growth, transport, spectroscopy studies of topologically non-trivial Heusler alloys, proximity effect and emergent behavior in Heusler heterostructures.

Molecular beam epitaxy of semiconductor/superconductor heterostructures and the quantum transport in the nanostructures of the hybrid systems.

Graduate Students


Study of Perpendicular Magnetic Anisotropy in Fe/MgO system with MOKE, XPS and SQUID


Growth and characterization of Heusler compounds and III-V heterostructures.


Growth and properties of III-V semiconductor heterostructures and Heusler alloys.  Emphasis on potentially topological insulating materals.


Spin injection, transport, and detection in semiconductors. IR detection and low dimensional systems. Spin torque transfer. Fabrication and characterization.

Mihir Pendharkar

Molecular Beam Epitaxy (MBE) growth of III-V semiconductor heterostructures, low temperature VIS-IR spectroscopy, transmission spectroscopy, Magneto Optic Kerr Effect, Scanning Tunneling Microscopy, spintronics and quantum computing


MBE growth and characterization of 2D electronic materials for advanced devices, such as hexagonal boron nitride (hBN)


Fabrication, measurement, and novel growth methods of Heusler alloys, currently focusing on thermoelectric properties of semiconducting thin-films.

I am currently growing oxide materials in order to understand behavior of strongly correlated electronic materials, and to study the Al/Sapphire interface for applications with quantum computing.