Palmstrøm Group 2019
Palmstrøm Group 2019

Lab Members

Principal Investigator


Epitaxy of dissimilar materials.

Postdoctoral Researchers

- Molecular beam epitaxy of Heuslers

- Rare-earth monopnictides and III-V semiconductors

- Angle-resolved photoemission spectroscopy (ARPES)

- Low-temperature transport

- Spintronics

- Growth and characterization of Heusler compounds

- III-V heterostructures

- Molecular beam epitaxy of semiconductor/superconductor heterostructures

- Quantum transport in nanostructures of the hybrid systems

- Low dimensional nanowire growth

- III-AsSb IR lasers 

- Heuslers compounds 

- Spintronics

- Materials for superconducting qubits

- Chemical beam epitaxy

- Molecular Beam Epitaxy (MBE) growth of III-V semiconductor-superconductor heterostructures

- Scanning tunneling microscopy

- Topological quantum computing

Graduate Students

- III-V high-mobility growth and devices  

- Heterostructures for topological quantum computing

- Molecular beam epitaxial growth and Metal Organic MBE (MOMBE)

- Transport, and spectroscopy studies of Co-based Weyl Semimetal Heusler alloys and Li-based half Heusler alloys

- MBE Growth of III-V materials

- Deposition of superconductors onto semiconductors

- Physics of superconductor/semiconductor hybrid systems

- Material systems for topological quantum computing

- Confined epitaxial lateral overgrowth

- Selective area growth

- Chemical beam epitaxy

- Transmission electron microscopy

- Low temperature transport

- Molecular beam epitaxy (MBE) growth

- Angle-resolved photoemission spectroscopy (ARPES)

- Electronic characterization of topologically non-trivial Heusler compounds and rare-earth monopnictides.

- MBE growth and characterization of 2D electronic materials for advanced devices, such as hexagonal boron nitride (hBN)

- Selective area growth (SAG) of low dimensional nanowire arrays

- Chemical beam epitaxy (CBE) 

- Superconductor/semiconductor hybrid systems

- Materials and devices for topological quantum computing


- MBE growth of III-V materials

- Scanning tunneling microscopy and spectroscopy

- Angle resolved photoelectron spectroscopy (ARPES)

Visiting Researchers

Visiting scientist from NRL. Research on surface science studies during plasma-assisted atomic layer epitaxial growth of InN on GaN substrates.

Heuslers and magnetic materials. On sabbatic from Cardiff University.

Visiting postdoc from NRL. Research on surface science studies during plasma-assisted atomic layer epitaxial growth of InN on GaN substrates.

MBE growth of Heuslers on II-VI materials. Visiting from the Army Research Lab (ARL).